supplement publication# 21257 rev: d amendment/ +4 issue date: june 27, 2001 am29f200b known good die 2 megabit (256 k x 8-bit/128 k x 16-bit) cmos 5.0 volt-only, sectored flash memorydie revision 1 distinctive characteristics n 5.0 v 10% for read and write operations minimizes system level power requirements n manufactured on 0.32 m process technology compatible with 0.5 m am29f200a device n high performance 70, 90, or 120 ns access time n low power consumption 20 ma typical active read current (byte mode) 28 ma typical active read current for (word mode) 30 ma typical program/erase current 1 a typical standby current n sector erase architecture one 16 kbyte, two 8 kbyte, one 32 kbyte, and three 64 kbyte sectors (byte mode) one 8 kword, two 4 kword, one 16 kword, and three 32 kword sectors (word mode) supports full chip erase sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors n top or bottom boot block configurations available n embedded algorithms embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors embedded program algorithm automatically writes and verifies data at specified addresses n minimum 1,000,000 write/erase cycles guaranteed n compatible with jedec standards pinout and software compatible with single-power-supply flash superior inadvertent write protection n data# polling and toggle bit detects program or erase cycle completion n ready/busy# output (ry/by#) hardware method for detection of program or erase cycle completion n erase suspend/resume supports reading data from a sector not being erased n hardware reset# pin resets internal state machine to the reading array data n 20-year data retention at 125 c n tested to datasheet specifications at temperature contact amd for higher temperature range devices n quality and reliability levels equivalent to standard packaged components
2 am29f200b known good die supplement general description the am29f200b in known good die (kgd) form is a 2 mbit, 5.0 volt-only flash memory. amd defines kgd as standard product in die form, tested for functionality and speed. amd kgd products have the same reli- ability and quality as amd products in packaged form. am29f200b features the am29f200b is organized as 262,144 bytes of 8 bits each or 131,072 words of 16 bits each. the 8-bit data appears on dq0-dq7; the 16-bit data appears on dq0-dq15. this device is designed to be programmed in-system with the standard system 5.0 volt v cc supply. a 12.0 volt v pp is not required for program or erase operations. the standard am29f200b in kgd form offers an access time of 70, 90, or 120 ns, allowing high-speed microprocessors to operate without wait states. to eliminate bus contention the device has separate chip enable (ce#), write enable (we#), and output enable (oe#) controls. the device requires only a single 5.0 volt power sup- ply for both read and write functions. internally gener- ated and regulated voltages are provided for the program and erase operations. the device is entirely command set compatible with the jedec single-power-supply flash standard . com- mands are written to the command register using stan- dard microprocessor write timings. register contents serve as input to an internal state-machine that con- trols the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithman internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. device erasure occurs by executing the erase com- mand sequence. this initiates the embedded erase algorithman internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, or by reading the dq7 (data# polling) and dq6/ dq2 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of the sectors of mem- ory. this can be achieved via programming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset# pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the system can place the device into the standby mode . power consumption is greatly reduced in this mode. amds flash technology combines years of flash mem- ory manufacturing experience to produce the highest lev- els of quality, reliability and cost effectiveness. the device electrically erases all bits within a sector simulta- neously via fowler-nordheim tunneling. the data is programmed using hot electron injection. electrical specifications refer to the am29f200b data sheet, publication number 21526, for full electrical specifications on the am29f200b. product selector guide family part number am29f200b kgd speed option (v cc = 5.0 v 10%) -75 (v cc = 5.0 v 5%) -90 -120 max access time, ns (t acc ) 70 90 120 max ce# access time, ns (t ce ) 70 90 120 max oe# access time, ns (t oe )30 35 50
am29f200b known good die 3 supplement die photograph die pad locations 1 2 3 4 5 6 7 8 9 10 11 12 1314 15 16 17 18 19 20 21 22 23 24 25 28 29 30 34 35 37 38 39 40 41 31 32 33 26 27 42 36 amd logo location
4 am29f200b known good die supplement pad description note: the coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. pad signal pad center (mils) pad center (millimeters) xyxy 1v cc 0.00 0.00 0.0000 0.0000 2dq4 C6.80 0.00 C0.1727 0.0000 3 dq12 C12.80 0.00 C0.3251 0.0000 4 dq5 C18.60 0.00 C0.4724 0.0000 5 dq13 C24.50 0.00 C0.6223 0.0000 6 dq6 C30.30 0.00 C0.7696 0.0000 7 dq14 C36.30 0.00 C0.9220 0.0000 8 dq7 C42.10 0.00 C1.0693 0.0000 9 dq15/a-1 C48.00 0.00 C1.2192 0.0000 10 v ss C55.70 1.40 C1.4148 0.0356 11 byte# C57.50 C6.50 C1.4605 C0.1651 12 a16 C57.50 C18.00 C1.4605 C0.4572 13 a15 C57.10 C124.90 C1.4503 C3.1725 14 a14 C51.30 C124.90 C1.3030 C3.1725 15 a13 C45.90 C124.90 C1.1659 C3.1725 16 a12 C40.00 C124.90 C1.0160 C3.1725 17 a11 C34.60 C124.90 C0.8788 C3.1725 18 a10 C28.80 C124.90 C0.7315 C3.1725 19 a9 C23.30 C124.60 C0.5918 C3.1648 20 a8 C17.40 C124.90 C0.4420 C3.1725 21 we# C12.00 C124.90 C0.3048 C3.1725 22 reset# C2.40 C128.60 C0.0610 C3.2664 23 ry/by# 9.50 C128.60 0.2413 C3.2664 24 a7 30.30 C124.90 0.7696 C3.1725 25 a6 35.80 C124.90 0.9093 C3.1725 26 a5 41.60 C124.90 1.0566 C3.1725 27 a4 47.00 C124.90 1.1938 C3.1725 28 a3 52.90 C124.90 1.3437 C3.1725 29 a2 58.30 C124.90 1.4808 C3.1725 30 a1 64.10 C124.90 1.6281 C3.1725 31 a0 64.50 C18.00 1.6383 C0.4572 32 ce# 64.50 C6.50 1.6383 C0.1651 33 v ss 64.50 3.80 1.6383 0.0965 34 oe# 55.00 2.30 1.3970 0.0584 35 dq0 47.40 0.00 1.2040 0.0000 36 dq8 41.50 0.00 1.0541 0.0000 37 dq1 35.60 0.00 0.9042 0.0000 38 dq9 29.70 0.00 0.7544 0.0000 39 dq2 23.90 0.00 0.6071 0.0000 40 dq10 18.00 0.00 0.4572 0.0000 41 dq3 12.10 0.00 0.3073 0.0000 42 dq11 6.20 0.00 0.1575 0.0000
am29f200b known good die 5 supplement ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the following: valid combinations valid combinations list configurations planned to be sup- ported in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. am29f200b t -75 dp c 1 die revision this number refers to the specific amd manufacturing process and product technology reflected in this document. it is entered in the revision field of amd standard product nomenclature. temperature range c= commercial (0c to +70c) i = industrial (C40 c to +85 c) e = extended (C55 c to +125 c) contact amd for higher temperature range devices. package type and minimum order quantity dp = waffle pack 245 die per 5 tray stack dg = gel-pak? die tray 486 die per 6 tray stack dt = surftape? (tape and reel) 2500 per 7-inch reel dw = gel-pak? wafer tray (sawn wafer on frame) call amd sales office for minimum order quantity speed option see product selector guide and valid combinations boot code sector architecture t = top sector b = bottom sector device number/description am29f200b known good die 2 megabit (256 k x 8-bit/128 k x 16-bit ) cmos flash memorydie revision 1 5.0 volt-only program and erase valid combinations am29f200bt-75, am29f200bb-75 (70 ns, v cc = 5.0 v 5%) dpc 1, dpi 1, dpe 1, dgc 1, dgi 1, dge 1, dtc 1, dti 1, dte 1, dwc 1, dwi 1, dwe 1 am29f200bt-90, am29f200bb-90 am29f200bt-120, am29f200bb-120
6 am29f200b known good die supplement packaging information surftape packaging gel-pak and waffle pack packaging direction of feed orientation relative to leading edge of tape and reel amd logo location 12 mm orientation relative to top left corner of gel-pak and waffle pack cavity plate amd logo location
am29f200b known good die 7 supplement product test flow figure 1 provides an overview of amds known good die test flow. for more detailed information, refer to the am29f200b product qualification database supple- ment for kgd. amd implements quality assurance pro- cedures throughout the product test flow. in addition, an off-line quality monitoring program (qmp) further guarantees amd quality standards are met on known good die products. these qa procedures also allow amd to produce kgd products without requiring or implementing burn-in. figure 1. amd kgd product test flow wafer sort 1 bake 24 hours at 250 c wafer sort 2 wafer sort 3 hot temperature packaging for shipment shipment dc parameters functionality programmability erasability data retention dc parameters functionality programmability erasability dc parameters functionality programmability erasability speed incoming inspection wafer saw die separation 100% visual inspection die pack
8 am29f200b known good die supplement physical specifications die dimensions . . . . . . . . . . . . . . 135 mils x 150 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.43 mm x 3.81 mm die thickness. . . . . . . . . . . . . . . . . . . . . . . . 19.7 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 m bond pad size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 m x 115.9 m pad area free of passivation . . . . . . . . . .13.99 mils 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 m 2 pads per die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 bond pad metalization . . . . . . . . . . . . . . . . . . . . al/cu die backside . . . . . . . . . . . . . . . . . . . . . . . . no metal, may be grounded (optional) passivation . . . . . . . . . . . . . . . . . . nitride/sog/nitride dc operating conditions v cc (supply voltage) . . . . . . . . . . . . . . . 4.5 v to 5.5 v junction temperature under bias: commerical, industrial, and extended temperature range . . . . .t j (max) = 130 c operating temperature commercial . . . . . . . . . . . . . . . . . . . 0 c to +70 c industrial . . . . . . . . . . . . . . . . . . . C40 c to +85 c extended . . . . . . . . . . . . . . . . . . C55 c to +125 c contact amd for higher temperature range devices. manufacturing information manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . fasl wafer sort test . . . . . . . . . . . . . sunnyvale, ca, usa, . . . . . . . . . . . . . . . . . . . . . . . . .and penang, malaysia manufacturing id (top boot) . . . . . . . . . . . . 98480ak (bottom boot) . . . . . . . .98480abk preparation for shipment . . . . . . . . penang, malaysia fabrication process . . . . . . . . . . . . . . . . . . . . cs39s die revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 special handling instructions processing do not expose kgd products to ultraviolet light or process them at temperatures greater than 250 c. failure to adhere to these handling instructions will result in irreparable damage to the devices. for best yield, amd recommends assembly in a class 10k clean room with 30% to 60% relative humidity. storage store at a maximum temperature of 30 c in a nitrogen- purged cabinet or vacuum-sealed bag. observe all standard esd handling procedures.
am29f200b known good die 9 supplement terms and conditions of sale for amd non-volatile memory die all transactions relating to unpackaged die under this agreement shall be subject to amds standard terms and conditions of sale, or any revisions thereof, which revisions amd reserves the right to make at any time and from time to time. in the event of conflict between the provisions of amds standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. amd warrants unpackaged die of its manufacture (known good die or die) against defective mate- rials or workmanship for a period of one (1) year from date of shipment. this warranty does not extend beyond the first purchaser of said die. buyer assumes full responsibility to ensure compliance with the appropriate handling, assembly and processing of known good die (including but not limited to proper die preparation, die attach, wire bonding and related assembly and test activities), and compliance with all guidelines set forth in amds specifications for known good die, and amd assumes no responsibility for envi- ronmental effects on known good die or for any activity of buyer or a third party that damages the die due to improper use, abuse, negligence, improper installation, accident, loss, damage in transit, or unau- thorized repair or alteration by a person or entity other than amd (warranty exclusions). the liability of amd under this warranty is limited, at amds option, solely to repair the die, to send replace- ment die, or to make an appropriate credit adjustment or refund in an amount not to exceed the original pur- chase price actually paid for the die returned to amd, provided that: (a) amd is promptly notified by buyer in writing during the applicable warranty period of any defect or nonconformity in the known good die; (b) buyer obtains authorization from amd to return the defective die; (c) the defective die is returned to amd by buyer in accordance with amds shipping instruc- tions set forth below; and (d) buyer shows to amds satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the above- referenced warranty exclusions. buyer shall ship such defective die to amd via amds carrier, collect. risk of loss will transfer to amd when the defective die is pro- vided to amds carrier. if buyer fails to adhere to these warranty returns guidelines, buyer shall assume all risk of loss and shall pay for all freight to amds specified location. the aforementioned provisions do not extend the original warranty period of any known good die that has either been repaired or replaced by amd. without limiting the foregoing, except to the extent that amd expressly warrants to buyer in a separate agreement signed by amd, amd makes no warranty with respect to the dies processing of date data, and shall have no liability for damages of any kind, under equity, law, or any other theory, due to the failure of such known good die to process any par- ticular data containing dates, including dates in and after the year 2000, whether or not amd received notice of the possi- bility of such damages. this warranty is expressed in lieu of all other warranties, expressed or implied, including the implied warranty of fitness for a particular purpose, the implied warranty of merchantability and of all other obligations or liabilities on amds part, and it neither assumes nor autho- rizes any other person to assume for amd any other liabilities. the foregoing constitutes the buyers sole and exclu- sive remedy for the furnishing of defec- tive or non conforming known good die and amd shall not in any event be liable for increased manufacturing costs, downtime costs, damages relating to buyers procurement of substitute die (i.e., cost of cover), loss of profits, rev- enues or goodwill, loss of use of or damage to any associated equipment, or any other indirect, incidental, special or consequential damages by reason of the fact that such known good die shall have been determined to be defective or non conforming. buyer agrees that it will make no warranty representa- tions to its customers which exceed those given by amd to buyer unless and until buyer shall agree to indemnify amd in writing for any claims which exceed amds warranty. known good die are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of the die can reason- ably be expected to result in a personal injury. buyers use of known good die for use in life support applica- tions is at buyers own risk and buyer agrees to fully indemnify amd for any damages resulting in such use or sale.
10 am29f200b known good die supplement revision summary revision a (1997) initial release. revision b (december 1997) formatted for 1998 flash data book. revision c (november 1998) global formatted to match current template. modified am29f200a data sheet for cs39s process technology. terms and conditions replaced warranty with new version. revision d (december 1998) global added -75 speed option. ordering information changed gel-pak quantity to 486. corrected surftape reel size to 7 inches. packaging information added section. moved orientation information from die photograph section into this section. revision d+1 (june 14, 1999) physical specifications corrected bond pad dimensions and deleted si from the bond pad metalization specification. revision d+2 (july 12, 1999) global the device is now available in the high temperature range (C55 c to +140 c). t j (max) for this range is +145 c. revision d+3 (november 17, 1999) global replaced references to high temperature ratings with a note to contact amd for such devices. revision d+4 (june 27, 2001) manufacturing information added penang, malaysia as a test facility (acn2016). trademarks copyright ? 2001 advanced micro devices, inc. all rights reserved. amd, the amd logo, and combinations thereof are registered trademarks of advanced micro devices, inc. product names used in this publication are for identification purposes only and may be trademarks of their respective companies .
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